Release-control structure for post-process release of a micromachined cantilever

Author

Naseh, S. ; Landsberger, L.M. ; Paranjape, M. ; Nikpour, B. ; Kahrizi, M. ; Antaki, R. ; Currie, J.F.

Author_Institution

Dept. of Electr. Eng., British Columbia Univ., Vancouver, BC, Canada

Volume

1

fYear

1996

fDate

26-29 May 1996

Firstpage

80

Abstract

This paper presents a cost-effective method of obtaining intact, released oxide/poly cantilever beams (using bulk micromachining), within the constraints of simple post-processing of a standard CMOS fabrication process. Extensions to the basic cantilever are used to prevent the main oxide/poly beam from bending upwards until the main cantilever is completely released from the Si beneath. The cantilever and extensions are designed based on etch anisotropy in TMAH 25 wt% at 80°C. The connection tether angles are designed to be at an angle where the underetch rate of the etchant is greatest

Keywords

CMOS integrated circuits; etching; integrated circuit technology; micromachining; micromechanical devices; 80 C; CMOS fabrication; TMAH etch anisotropy; connection tether angle; micromachining; oxide/poly cantilever beam; post-processing; release-control structure; Actuators; Anisotropic magnetoresistance; CMOS process; Fabrication; Laboratories; Micromachining; Residual stresses; Silicon; Structural beams; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 1996. Canadian Conference on

Conference_Location

Calgary, Alta.

ISSN

0840-7789

Print_ISBN

0-7803-3143-5

Type

conf

DOI

10.1109/CCECE.1996.548043

Filename

548043