Title :
Release-control structure for post-process release of a micromachined cantilever
Author :
Naseh, S. ; Landsberger, L.M. ; Paranjape, M. ; Nikpour, B. ; Kahrizi, M. ; Antaki, R. ; Currie, J.F.
Author_Institution :
Dept. of Electr. Eng., British Columbia Univ., Vancouver, BC, Canada
Abstract :
This paper presents a cost-effective method of obtaining intact, released oxide/poly cantilever beams (using bulk micromachining), within the constraints of simple post-processing of a standard CMOS fabrication process. Extensions to the basic cantilever are used to prevent the main oxide/poly beam from bending upwards until the main cantilever is completely released from the Si beneath. The cantilever and extensions are designed based on etch anisotropy in TMAH 25 wt% at 80°C. The connection tether angles are designed to be at an angle where the underetch rate of the etchant is greatest
Keywords :
CMOS integrated circuits; etching; integrated circuit technology; micromachining; micromechanical devices; 80 C; CMOS fabrication; TMAH etch anisotropy; connection tether angle; micromachining; oxide/poly cantilever beam; post-processing; release-control structure; Actuators; Anisotropic magnetoresistance; CMOS process; Fabrication; Laboratories; Micromachining; Residual stresses; Silicon; Structural beams; Wet etching;
Conference_Titel :
Electrical and Computer Engineering, 1996. Canadian Conference on
Conference_Location :
Calgary, Alta.
Print_ISBN :
0-7803-3143-5
DOI :
10.1109/CCECE.1996.548043
