A micro-integrated Peltier heat pump for localized on-chip temperature control

Author

Shafai, C. ; Brett, M.J.

Author_Institution

Dept. of Electr. Eng., Alberta Univ., Edmonton, Alta., Canada

Volume

1

fYear

1996

fDate

26-29 May 1996

Firstpage

88

Abstract

A thin film Peltier heat pump was fabricated using standard semiconductor patterning and etching techniques. The device consisted of chrome-gold and bismuth telluride metallization to form the thermoelectric junctions. The device achieved a maximum heat pumping rate of -30 μW at a current of 1.03 mA when operating in the cooling mode. These values were less than what was expected due to excessive resistance in the chrome-gold and bismuth-telluride metallization. Thermal isolation of the Peltier heat pump on a 1.8 μm thick oxide bridge was used to enhance device performance. The Peltier device succeeded in lowering the temperature of the oxide bridge 1.5°C below ambient. The initial thermal response time in the cooling mode was 10 ms/°C, with a thermal relaxation time of 9 ms/°C

Keywords

Peltier effect; cooling; heat pumps; integrated circuit packaging; temperature control; thermoelectric devices; -30 muW; 1.03 mA; Bi₂Te₃-Cr-Au-SiO₂; cooling; etching; localized on-chip temperature control; metallization; micro-integrated thin film Peltier heat pump; oxide bridge; semiconductor patterning; thermal isolation; thermal relaxation time; thermal response time; thermoelectric junction; Bismuth; Bridges; Cooling; Etching; Heat pumps; Metallization; Semiconductor thin films; Temperature; Thermoelectric devices; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 1996. Canadian Conference on

Conference_Location

Calgary, Alta.

ISSN

0840-7789

Print_ISBN

0-7803-3143-5

Type

conf

DOI

10.1109/CCECE.1996.548045

Filename

548045