Title :
A design of transresistance amplifier for high gainband-width applications
Author :
Wang, Yanjie ; Raut, Rabin
Abstract :
A new CMOS transresistance amplifier for high gain-bandwidth applications is presented. The proposed circuit, based on a common-gate topology, is compared with other recent reported transresistance amplifiers. Cadence SpectreS simulation using 1.8 V TSMC 0.18 μm CMOS technology was performed and gave 1.8 GHz bandwidth, 41dB Ω transresistance gain and input noise level of 22 pA/√(Hz).
Keywords :
CMOS analogue integrated circuits; wideband amplifiers; 0.18 micron; 1.8 GHz; 1.8 V; CMOS transresistance amplifier; common-gate topology; high gain-bandwidth amplifier; transresistance gain; Bandwidth; CMOS technology; Capacitance; Circuit simulation; Circuit topology; Equations; Frequency; Impedance; Performance gain; Voltage;
Conference_Titel :
Electronics, Circuits and Systems, 2003. ICECS 2003. Proceedings of the 2003 10th IEEE International Conference on
Print_ISBN :
0-7803-8163-7
DOI :
10.1109/ICECS.2003.1301964
