DocumentCode
303007
Title
A balanced distributed preamplifier using MMIC GaAs MESFET technology
Author
Nguyen, T.L. ; Freundorfer, A.P.
Author_Institution
Dept. of Electr. & Comput. Eng., Queen´´s Univ., Kingston, Ont., Canada
Volume
1
fYear
1996
fDate
26-29 May 1996
Firstpage
134
Abstract
A MMIC balanced preamplifier was fabricated using a 0.8 μm gate length process. A 45 dBΩ transimpedance gain, a 6 GHz bandwidth, a 10 pA/√(Hz) input noise and a 12 dB CMRR were measured
Keywords
III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; differential amplifiers; distributed amplifiers; field effect MMIC; gallium arsenide; preamplifiers; 0.8 micron; 6 GHz; CMRR; GaAs; MMIC GaAs MESFET technology; balanced distributed preamplifier; bandwidth; input noise; transimpedance gain; Bandwidth; Frequency; Gallium arsenide; Impedance; Low-frequency noise; MESFETs; MMICs; Noise reduction; Photodiodes; Preamplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Computer Engineering, 1996. Canadian Conference on
Conference_Location
Calgary, Alta.
ISSN
0840-7789
Print_ISBN
0-7803-3143-5
Type
conf
DOI
10.1109/CCECE.1996.548055
Filename
548055
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