Title :
A silicon radio-frequency single electron transistor at 4.2K
Author :
Angus, S.J. ; Ferguson, A.J. ; Dzurak, A.S. ; Clark, R.G.
Author_Institution :
Australian Res. Council Centre of Excellence for Quantum Comput. Technol., Univ. of New South Wales, Sydney, NSW
Abstract :
We report the demonstration at 4.2K of a silicon radio-frequency single electron transistor (rf-SET) fabricated in a complementary metal-oxide-semiconductor (CMOS) compatible architecture. Charge sensitivities of better than 10mue/radicHz are demonstrated at MHz bandwidth at mK, and charge sensitivity of the order 20mue/radicHz is achieved at 4K. These results demonstrate that silicon may be used to fabricate fast, sensitive electrometers for use at 4.2K.
Keywords :
CMOS integrated circuits; microwave field effect transistors; silicon; single electron transistors; Si; charge sensitivity; complementary metal-oxide-semiconductor; silicon radio-frequency single electron transistor; temperature 4 K; temperature 4.2 K; Aluminum; Australia Council; Bandwidth; CMOS technology; Quantum computing; Quantum dots; Radio frequency; Silicon; Single electron devices; Single electron transistors; radio-frequency single electron transistor (rf-SET); silicon; tunnel barriers;
Conference_Titel :
Nanoscience and Nanotechnology, 2008. ICONN 2008. International Conference on
Conference_Location :
Melbourne, Vic.
Print_ISBN :
978-1-4244-1503-8
Electronic_ISBN :
978-1-4244-1504-5
DOI :
10.1109/ICONN.2008.4639267
