A silicon radio-frequency single electron transistor at 4.2K

Author

Angus, S.J. ; Ferguson, A.J. ; Dzurak, A.S. ; Clark, R.G.

Author_Institution

Australian Res. Council Centre of Excellence for Quantum Comput. Technol., Univ. of New South Wales, Sydney, NSW

fYear

2008

fDate

25-29 Feb. 2008

Firstpage

145

Lastpage

147

Abstract

We report the demonstration at 4.2K of a silicon radio-frequency single electron transistor (rf-SET) fabricated in a complementary metal-oxide-semiconductor (CMOS) compatible architecture. Charge sensitivities of better than 10mue/radicHz are demonstrated at MHz bandwidth at mK, and charge sensitivity of the order 20mue/radicHz is achieved at 4K. These results demonstrate that silicon may be used to fabricate fast, sensitive electrometers for use at 4.2K.

Keywords

CMOS integrated circuits; microwave field effect transistors; silicon; single electron transistors; Si; charge sensitivity; complementary metal-oxide-semiconductor; silicon radio-frequency single electron transistor; temperature 4 K; temperature 4.2 K; Aluminum; Australia Council; Bandwidth; CMOS technology; Quantum computing; Quantum dots; Radio frequency; Silicon; Single electron devices; Single electron transistors; radio-frequency single electron transistor (rf-SET); silicon; tunnel barriers;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoscience and Nanotechnology, 2008. ICONN 2008. International Conference on

Conference_Location

Melbourne, Vic.

Print_ISBN

978-1-4244-1503-8

Electronic_ISBN

978-1-4244-1504-5

Type

conf

DOI

10.1109/ICONN.2008.4639267

Filename

4639267