DocumentCode :
3030135
Title :
11GHz CMOS ring oscillator
Author :
Tiwari, Kriti ; Kumar, Abhishek
Author_Institution :
Dept. of ECE, Lovely Prof. Univ., Jalandhar, India
fYear :
2015
fDate :
15-16 May 2015
Firstpage :
1280
Lastpage :
1283
Abstract :
This paper presents the design and performance analysis of a ring oscillator using CMOS 90nm technology. A ring oscillator contains odd number of cascaded inverter in which output is oscillating between high and low level. Inverter with minimum delay is best choice for frequency generation. Delay of inverter can reduce by adding secondary inputs and switching these earlier than the primary inputs. High oscillation frequency corporate narrow bandwidth. In this paper, a method to enhance bandwidth has been introduced. 600MHZ bandwidth can be achieved while oscillation frequency is 11GHz.
Keywords :
CMOS integrated circuits; invertors; microwave oscillators; oscillators; CMOS ring oscillator; CMOS technology; bandwidth 600 MHz; cascaded inverter; frequency 11 GHz; frequency generation; inverter delay; size 90 nm; CMOS integrated circuits; Capacitance; Delays; Inverters; Ring oscillators; Voltage control; Ring oscillator; VCO; cadence; delay; frequency; variable delay;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computing, Communication & Automation (ICCCA), 2015 International Conference on
Conference_Location :
Noida
Print_ISBN :
978-1-4799-8889-1
Type :
conf
DOI :
10.1109/CCAA.2015.7148572
Filename :
7148572
Link To Document :
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