DocumentCode :
3030239
Title :
Structural and optical properties of textured ZnO:Ga films for large area thin film solar cells
Author :
Kishimoto, K. ; Ouchida, T. ; Tachibana, S. ; Sannomiya, H. ; Nomoto, K.
Author_Institution :
Sharp Corp., Nara, Japan
fYear :
2000
fDate :
2000
Firstpage :
754
Lastpage :
757
Abstract :
The authors have tried to prepare the texture structure with transparent conducting oxide on the glass substrate by post etching ZnO:Ga films in acetic acid. It was confirmed that the good textured ZnO:Ga films with (002) growth orientation for thin film solar cells was fabricated by adequate etching of the ZnO:Ga films in acetic acid. By careful controlling the uniformity of the orientation of ZnO:Ga films, they achieved to fabricate good textured ZnO:Ga films for a-Si:H single junction solar cell submodule with a size of 650×455mm2
Keywords :
II-VI semiconductors; amorphous semiconductors; elemental semiconductors; etching; gallium; hydrogen; rough surfaces; semiconductor device measurement; semiconductor device testing; semiconductor doping; semiconductor thin films; silicon; solar cells; surface texture; zinc compounds; (002) growth orientation; 455 mm; 650 mm; Si:H; ZnO:Ga; a-Si:H large-area thin-film solar cells; acetic acid; glass substrate; optical properties; post etching; solar cell submodule fabrication; structural properties; texture structure; textured ZnO:Ga films; Conductive films; Conductivity; Etching; Glass; Hydrogen; Optical films; Photovoltaic cells; Plasma temperature; Substrates; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
ISSN :
0160-8371
Print_ISBN :
0-7803-5772-8
Type :
conf
DOI :
10.1109/PVSC.2000.915993
Filename :
915993
Link To Document :
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