Low power technology/circuit co-development for advanced mobile devices

Technology options at 45 nm and 32/28 nm have been optimized for various mobile device applications. Disposable high performance technology is introduced to satisfy both high speed and low power requirement of modern convergence mobile computing and communication device. Dual Core Oxide scheme using SiON/Poly gate stack was used in 45 nm. Scaled SiON/Poly gate stack is sufficient for 32/28 nm low power/low cost technology, while HK/MG gate stack with strong process induced stress option is needed for high performance technology.