• DocumentCode
    3030446
  • Title

    Microcrystalline Si and (Si,Ge) solar cells on plastic substrates

  • Author

    Dalal, Vikram L. ; Erickson, Karl

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Eng., Iowa State Univ., Ames, IA, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    792
  • Lastpage
    795
  • Abstract
    We report on the growth of microcrystalline Si and (Si,Ge) films and devices on polyimide substrates. The films and devices were grown using remote plasma CVD process using a remote, low pressure ECR reactor. The substrates were Mo coated polyimide. The devices were of the p-n-n+ type. The crystalline quality of the films was determined using Raman measurements. Novel buffer layers were used to increase the voltage in the device. The devices show excellent voltages, fill factors and quantum efficiency
  • Keywords
    Ge-Si alloys; Raman spectra; elemental semiconductors; plasma CVD; semiconductor growth; semiconductor materials; silicon; solar cells; (Si,Ge) solar cells; Mo coated polyimide; Raman measurements; Si; Si:H solar cells; SiGe; buffer layers; crystalline quality; fill factors; growth; low pressure ECR reactor; microcrystalline Si; p-n-n+ type devices; plastic substrates; polyimide substrates; quantum efficiency; remote plasma CVD process; voltage; Buffer layers; Crystallization; Inductors; Photovoltaic cells; Plasma devices; Plasma measurements; Plastics; Polyimides; Semiconductor films; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
  • Conference_Location
    Anchorage, AK
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-5772-8
  • Type

    conf

  • DOI
    10.1109/PVSC.2000.916002
  • Filename
    916002