Title :
Energy efficient power MOSFETs
Author_Institution :
Power Technol. Centre, ON Semicond., Oudenaarde, Belgium
Abstract :
An overview is given of the main technology trends and innovations in Power MOSFET transistors ranging from LV(<;50V), MV (50V-200V) to HV (200V-1000V), in view of the needs for high energy efficient power management systems. Alternatives to MOSFET, like IGBT and GaN-HEMT, are briefly highlighted and discussed.
Keywords :
gallium compounds; high electron mobility transistors; insulated gate bipolar transistors; power MOSFET; GaN; HEMT; IGBT; MOSFET transistors; energy efficient Power MOSFET; power management systems; voltage 200 V to 1000 V; voltage 50 V to 200 V; Energy efficiency; Energy management; Insulated gate bipolar transistors; MOSFETs; Monolithic integrated circuits; Power system management; Power transistors; Switching frequency; Technological innovation; Voltage;
Conference_Titel :
IC Design and Technology (ICICDT), 2010 IEEE International Conference on
Conference_Location :
Grenoble
Print_ISBN :
978-1-4244-5773-1
DOI :
10.1109/ICICDT.2010.5510264
