Title :
Self-assembled composite quantum dots for photovoltaic applications
Author :
Kiravittaya, S. ; Songmuang, R. ; Thainoi, S. ; Sopitpan, S. ; Kanjanachuchai, S. ; Ratanathammapan, S. ; Sawadsaringkam, M. ; Panyakeow, S.
Author_Institution :
Chulalongkorn Univ., Bangkok, Thailand
Abstract :
InAs and InGaAs quantum dots were prepared by MBE onto GaAs substrates. Quantum dots size was found to be 40-50 nm in diameter and 4-7 nm in height by AFM. PL peak of InAs quantum dots is at 980 nm, and at a shorter wavelength for InGaAs dots. Composite InAs/InGaAs quantum dots should give a wider spectral response in solar cell applications. Stabilized performance of quantum dots structure at high temperatures is an attractive feature. A possibility to store photo-generated carriers in the composite structure is another important prospect
Keywords :
III-V semiconductors; atomic force microscopy; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; self-assembly; semiconductor growth; semiconductor quantum dots; solar cells; 4 to 7 nm; 40 to 50 nm; AFM; GaAs; GaAs substrates; InAs; InGaAs; MBE; PL peak; composite InAs/InGaAs quantum dots; high temperatures; photo-generated carriers; photovoltaic applications; self-assembled composite quantum dots; solar cell applications; spectral response; stabilized performance; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Photovoltaic cells; Photovoltaic systems; Quantum dot lasers; Quantum dots; Solar power generation; Temperature; US Department of Transportation;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916008
