Title :
Progress and challenges of tungsten-filled through-silicon via
Author :
Triyoso, D.H. ; Dao, T.B. ; Kropewnicki, T. ; Martinez, F. ; Noble, R. ; Hamilton, M.
Author_Institution :
Freescale Semicond. Inc., Austin, TX, USA
Abstract :
Through Silicon Via (TSV) has been used for back-end packaging and more recently, for front end active device integration. In this work we report recent progress and challenges for via cleaning, via filling and wafer bow/stress monitoring. Furthermore, the importance of preparation technique for accurate characterization of tungsten-filled TSV profile will be presented.
Keywords :
cleaning; integrated circuit packaging; three-dimensional integrated circuits; tungsten; W; back-end packaging; cleaning; front end active device integration; tungsten-filled TSV; tungsten-filled through-silicon via; wafer bow-stress monitoring; Bonding; Etching; Filling; Glass; Packaging; Polymers; Silicon; Stress; Through-silicon vias; Tungsten;
Conference_Titel :
IC Design and Technology (ICICDT), 2010 IEEE International Conference on
Conference_Location :
Grenoble
Print_ISBN :
978-1-4244-5773-1
DOI :
10.1109/ICICDT.2010.5510274
