DocumentCode :
3030723
Title :
Direct bonding for wafer level 3D integration
Author :
Di Cioccio, Lea ; Radu, Ionut ; Gueguen, Pierric ; Sadaka, Mariam
Author_Institution :
LETI, CEA, Grenoble, France
fYear :
2010
fDate :
2-4 June 2010
Firstpage :
110
Lastpage :
113
Abstract :
3D integration is a promising and fast growing field that addresses the convergence of Moore´s Law and more than Moore. 3D integration offers higher performance, higher density, higher functionality, smaller form factor, and potential cost reduction. With this emerging field, new and improved technologies will be necessary to meet the associated manufacturing challenges. This paper describes some 3D building blocks describing oxide to oxide and metal to metal bonding with alignment.
Keywords :
integrated circuit bonding; three-dimensional integrated circuits; Moore law; direct bonding; metal to metal bonding; oxide to oxide bonding; wafer level 3D integration; Copper; Monitoring; Moore´s Law; Research and development; Silicon; Technology management; Temperature; Thermal management; Wafer bonding; Wiring; 3D technology; aligned bonding; copper direct bonding; oxide direct bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IC Design and Technology (ICICDT), 2010 IEEE International Conference on
Conference_Location :
Grenoble
Print_ISBN :
978-1-4244-5773-1
Type :
conf
DOI :
10.1109/ICICDT.2010.5510276
Filename :
5510276
Link To Document :
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