Title :
Pre-existing and process induced defects in high-k gate dielectrics ∼direct observation with EBIC and impact on 1/f noise∼
Author :
Sato, Motoyuki ; Chen, Jun ; Sekiguchi, Takashi ; Chikyow, Toyohiro ; Yugami, Jiro ; Ikeda, Kazuto ; Ohji, Yuzuru
Author_Institution :
Toshiba Corp., Isogo, Japan
Abstract :
Microscopical investigation of leakage behaviors of Hf-based high-k gate stacks was achieved by means of electron-beam-induced current (EBIC) method. With this method, we could observe the pre-existing and stress induced defect in high-k. This pre-existing defect affect on MOSFET characteristics. We investigated in detail the relationship between the defect (in bulk high-k and interface) and 1/f noise on (110) and (100) substrates. The 1/f noise is strongly related to the degradation in the hole mobility due to the pre-existing defect or process integration damage. On the other hand, the 1/f noise of nMOSFETs is rerated to interface defects rather than electron mobility degradation.
Keywords :
1/f noise; MOSFET; electron mobility; hafnium; high-k dielectric thin films; hole mobility; semiconductor device noise; 1/f noise; Hf; Hf-based high-k gate stacks; electron mobility degradation; electron-beam-induced current method; high-k gate dielectrics; hole mobility; nMOSFET; process induced defects; process integration damage; stress induced defect; Degradation; Electrodes; Electron beams; Electron microscopy; Electron mobility; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Spatial resolution; Stress; 1/f noise; EBIC; high-k; metal gate; mobility;
Conference_Titel :
IC Design and Technology (ICICDT), 2010 IEEE International Conference on
Conference_Location :
Grenoble
Print_ISBN :
978-1-4244-5773-1
DOI :
10.1109/ICICDT.2010.5510282
