Title :
Estimation of initial growth process of microcrystalline silicon thin film using double layered structure
Author :
Ishitani, T. ; Kimura, Y. ; Takeuchi, A. ; Yoshioka, Y. ; Kamisako, K.
Author_Institution :
Tokyo Univ. of Agric. & Technol., Japan
Abstract :
Hydrogenated microcrystalline silicon (μc-Si:H) films of single- and double-layered structures have been formed at different microwave powers and hydrogen dilution ratios on hydrogen-radical CVD method. The films have been analyzed using X-ray diffraction measurements (XRD), the E2 peak intensity of ultraviolet reflectance and electrical conductivity. It was clarified that crystallinity of the upper growth layer is affected strongly by that of the lower initial layer and consequently it controls electrical conductivity. These results suggest that in continuous deposition of μc-Si:H the same effects can be caused even if deposition conditions are changed during deposition
Keywords :
CVD coatings; X-ray diffraction; chemical vapour deposition; electrical conductivity; elemental semiconductors; hydrogen; semiconductor growth; semiconductor thin films; silicon; solar cells; μc-Si:H; E2 peak intensity; Si:H; X-ray diffraction measurements; continuous deposition; crystallinity; double layered structure; electrical conductivity; hydrogen dilution ratios; hydrogen-radical CVD method; initial growth process estimation; microcrystalline Si thin film; microcrystalline silicon thin film solar cells; microwave power; ultraviolet reflectance; upper growth layer; Conductive films; Conductivity measurement; Electric variables measurement; Hydrogen; Microwave theory and techniques; Optical films; Semiconductor films; Silicon; X-ray diffraction; X-ray scattering;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916026
