Title :
Natively textured ZnO grown by PECVD as front electrode material for amorphous silicon pin solar cells
Author :
Löffler, J. ; Schropp, R.E.I. ; Groenen, R. ; van de Sanden, Mauritius C. M. ; Linden, J.L.
Author_Institution :
Debye Res. Inst., Utrecht Univ., Netherlands
Abstract :
Natively textured ZnO layers for the application as front electrode material in amorphous silicon pin solar cells have been deposited by expanding thermal plasma chemical vapor deposition. Films deposited in the temperature regime from 150 to 350°C at a rate between 0.65 and 0.75 nm/s have been characterized with respect to their optical, electrical and structural properties. Results comparable to Asahi U-type SnO2:F have been obtained for these layers. The first solar cells on ZnO, which was deposited at 250°C and 350°C, show an efficiency approaching 10%, only slightly lower than on Asahi U-type SnO2:F
Keywords :
amorphous semiconductors; electrodes; elemental semiconductors; light scattering; light transmission; plasma CVD coatings; silicon; solar cells; surface texture; zinc compounds; 150 to 350 C; 9.2 percent; 9.6 percent; PECVD; Si; Si-ZnO; ZnO; amorphous Si pin solar cells; amorphous silicon pin solar cells; electrical properties; expanding thermal plasma chemical vapor deposition; front electrode material; low sheet resistance; natively textured ZnO; optical properties; optical scattering; optical transmittance; structural properties; Amorphous silicon; Electrodes; Optical films; Optical materials; Photovoltaic cells; Plasma applications; Plasma chemistry; Plasma temperature; Thermal expansion; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916027
