A flexible 3-inch fabrication line for InP-based HEMT and HBT MMIC production

Author

Elliott, J. ; Tran, L. ; Lai, R. ; Block, T. ; Cowles, J. ; Tran, D. ; Jones, W. ; Chen, Y.C. ; Oki, A. ; Streit, D.

Author_Institution

Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1997

fDate

11-15 May 1997

Firstpage

501

Lastpage

504

Abstract

We discuss the issues related to fabrication of InP based MMICs for government and commercial production applications. InP based MMICs offer unique advantages for many government systems which include lower noise figure, lower DC power consumption and higher linearity. Under the MAFET program, TRW is bringing both InP HEMT and InP HBT-based MMICs from a R&D state into production capability. Manufacturing issues will be addressed from a critical node point of view, where critical nodes are defined as those process steps with the greatest impact on the MMIC performance and yield

Keywords

HEMT integrated circuits; III-V semiconductors; bipolar MMIC; field effect MMIC; flexible manufacturing systems; heterojunction bipolar transistors; indium compounds; integrated circuit manufacture; 3 inch; DC power consumption; HBT; HEMT; InP; InP MMIC; MAFET program; TRW; commercial production; critical nodes; flexible fabrication line; government system; linearity; noise figure; Energy consumption; Fabrication; Government; HEMTs; Heterojunction bipolar transistors; Indium phosphide; Linearity; MMICs; Noise figure; Production;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600212

Filename

600212