Title :
0.18 μm CMOS and beyond
Author_Institution :
Bell Labs., Lucent Technol., Murray Hill, NJ, USA
Abstract :
As we move to the 0.18 μm node and beyond, the dominant trend in device and process technology is a simple continuation of several decades of scaling. However, some serious challenges to straightforward scaling are on the horizon. This paper reviews the present status of process technology and examines the likely departures from scaling in the various areas. The 0.18 μm node is seeing the first major new materials introduced into the Si process for many years in the interconnect, and major departures from the traditional process are being actively considered for the transistor. However, it is probable that continued scaling will continue to dominate advanced processes for several generations to come
Keywords :
CMOS integrated circuits; integrated circuit technology; lithography; reviews; 0.18 micron; CMOS scaling; Cu; Cu interconnect; Si; device technology; lithographic processes; process technology; system-on-chip; Acceleration; Breakdown voltage; CMOS technology; Delay; Integrated circuit interconnections; Lithography; Permission; Power system interconnection; Power system management; Transistors;
Conference_Titel :
Design Automation Conference, 1999. Proceedings. 36th
Conference_Location :
New Orleans, LA
Print_ISBN :
1-58113-092-9
DOI :
10.1109/DAC.1999.782043
