DocumentCode :
3031328
Title :
Improving Cu line Rs control using feed-forward information for CMP endpointing
Author :
Hu, Xiaoyuan ; Wang, Zhihong ; Tu, Wen-Chiang ; Mao, Daxin
Author_Institution :
CMP Div., Appl. Mater., Inc., Sunnyvale, CA, USA
fYear :
2010
fDate :
6-9 June 2010
Firstpage :
1
Lastpage :
3
Abstract :
A promising method for controlling sheet resistance (Rs) of Cu interconnect through improved chemical mechanical planarization (CMP) endpoint capability was developed using broadband spectrometry together with feed-forward information from upstream process conditions. With this new method, the wafer-to-wafer (WTW) Rs range was reduced more than 50% compared to time-based CMP polish control.
Keywords :
chemical mechanical polishing; process control; CMP endpointing; Cu; broadband spectrometry; chemical mechanical planarization; controlling sheet resistance; endpoint capability; feed-forward information; time-based CMP polish control; upstream process condition; wafer-to-wafer; Chemical technology; Dielectric materials; Dielectric measurements; Electrical resistance measurement; Etching; Feedforward systems; Libraries; Process control; Thickness control; Thickness measurement; CMP; Cu line sheet resistance; in-situ process control; white light endpoint;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference (IITC), 2010 International
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4244-7676-3
Type :
conf
DOI :
10.1109/IITC.2010.5510306
Filename :
5510306
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3031328
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