Title :
3D TSV integration technology challenges for high volume production from fabless supply chain aspect
Author :
Gu, S.Q. ; Ray, U. ; Li, Y. ; Chandrasekaran, A. ; Henderson, B. ; Nowak, M.
Author_Institution :
Adv. Technol. Integration, Qualcomm, San Diego, CA, USA
Abstract :
Limited battery power for wireless devices demands improvement in power efficiency while enhancing system performance. Traditional semiconductor scaling faces challenges to meet this requirement. 3D integration of multiple chips using through silicon via (TSV) is one of the technologies that can extend the performance scaling trend. However, the semiconductor industry will need to overcome many technology hurdles before 3D TSV integration can be implemented in high volume manufacturing, particularly for the fabless supply chain. This paper will review the integration challenges and recent progress in process integration, reliability, yield and cost.
Keywords :
reliability; supply chains; three-dimensional integrated circuits; 3D TSV integration technology; battery power; fabless supply chain aspect; high volume manufacturing; high volume production; power efficiency; process integration; reliability; semiconductor industry; semiconductor scaling; through silicon via; wireless devices; Batteries; CMOS technology; Conducting materials; Electronics industry; Etching; Production; Silicon; Supply chains; System performance; Through-silicon vias;
Conference_Titel :
Interconnect Technology Conference (IITC), 2010 International
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4244-7676-3
DOI :
10.1109/IITC.2010.5510309