Title :
Optimization of InGaAs/InAlAs/InP HEMT gate recess process for high frequency and high power applications
Author :
Chen, Y.C. ; Lai, R. ; Wang, H. ; Yen, H.C. ; Streit, D. ; Dia, R.M. ; Jones, W. ; Block, T. ; Liu, P.H. ; Huang, T.W. ; Chou, Y.C. ; Stamper, K.
Author_Institution :
Electron. Space & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
We have optimized the gate recess etch process for our W-band high power 0.15 μm gate length InGaAs/InAlAs/InP HEMTs. A 640 μm single-stage MMIC amplifier built on this device demonstrated an output power of 130 mW with 13% power added efficiency at 94 GHz. This results represent the best output power fixture data to date measured from a single InP-based HEMT MMIC at this frequency
Keywords :
III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium arsenide; indium compounds; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; power field effect transistors; semiconductor technology; 0.15 micron; 13 percent; 130 mW; 94 GHz; InGaAs-InAlAs-InP; InGaAs/InAlAs/InP HEMT; W-band; gate recess process optimization; high frequency device; high power device; output power; power added efficiency; single-stage MMIC amplifier; Etching; Fixtures; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MMICs; Power amplifiers; Power generation; Power measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600214
