Author :
Katti, G. ; Mercha, A. ; Stucchi, M. ; Tokei, Zs ; Velenis, D. ; Van Olmen, J. ; Huyghebaert, C. ; Jourdain, A. ; Rakowski, M. ; Debusschere, I. ; Soussan, P. ; Oprins, H. ; Dehaene, W. ; De Meyer, K. ; Travaly, Y. ; Beyne, E. ; Biesemans, S. ; Swinnen, B
Abstract :
In this paper, we investigate the electrical behavior of TSV with increasing temperatures (25-150°C). TSV capacitance, leakage current and TSV resistance with varying temperatures are reported. TSV C-V characteristics are analyzed to extract the oxide charges. It is confirmed that the depletion behavior of TSV can be exploited to reduce TSV capacitance even at higher temperatures. In addition, lumped RC model of the TSV for circuit simulations is enhanced by incorporating measured TSV resistance and capacitance change due to temperature. The results are corroborated with the 2D/3D Ring Oscillator (RO) measurements at different temperatures.
Keywords :
integrated circuit interconnections; leakage currents; TSV capacitance; TSV resistance; circuit simulation; electrical behavior; leakage current; lumped RC model; ring oscillator; temperature 25 degC to 150 degC; temperature dependent electrical characteristics; through-Si-via interconnections; Capacitance; Capacitance-voltage characteristics; Electric resistance; Electric variables; Electrical resistance measurement; Integrated circuit interconnections; Leakage current; Temperature dependence; Temperature measurement; Through-silicon vias; 3D ICs; Thermal behavior; Through Silicon Via (TSV);
