DocumentCode :
3031460
Title :
Capturing intrinsic impact of low-k dielectric stacks and packaging materials on mechanical integrity of Cu/low-k interconnects
Author :
Furusawa, Takeshi ; Goto, Kinya ; Izumitani, Junko ; Matsuura, Masazumi ; Fujisawa, Masahiko ; Kawanabe, Naoki ; Hirose, Tetsuya ; Hayashi, Eiji ; Baba, Shinji ; Asano, Yoshinobu ; Ichiki, Tsutomu ; Takata, Yoshifumi
Author_Institution :
Renesas Technol. Corp., Ibaraki, Japan
fYear :
2010
fDate :
6-9 June 2010
Firstpage :
1
Lastpage :
3
Abstract :
We present a methodology for capturing the intrinsic impact of both low-k dielectric stacks and packaging materials on the mechanical integrity of Cu/low-k interconnects. This drastically reduces the time and cost of sample fabrication and reliability tests and provides short-cycle feedback for both low-k and packaging materials development. Furthermore, this methodology is applicable for all types of packaging, from low-cost QFPs to high-performance Pb-free FCBGAs.
Keywords :
copper; electronics packaging; integrated circuit interconnections; integrated circuit reliability; low-k dielectric thin films; Cu/low-k interconnect; Pb-free FCBGA; low-cost QFP; low-k dielectric stack; mechanical integrity; packaging material; Costs; Delamination; Dielectric materials; Electronics packaging; Feedback; Inorganic materials; Materials reliability; Materials testing; Resins; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference (IITC), 2010 International
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4244-7676-3
Type :
conf
DOI :
10.1109/IITC.2010.5510312
Filename :
5510312
Link To Document :
بازگشت