Title :
0.55 eV n/p/n MIM TPV cell development
Author :
Wilt, David M. ; Clark, Eric B. ; Clevenger, Marvin B. ; Murray, Christopher S. ; Wehrer, Rebecca J.
Author_Institution :
NASA Glenn Res. Center, Cleveland, OH, USA
Abstract :
A monolithic interconnected module (MIM) has been described which serves as the photovoltaic converter and the spectral control mechanism in thermophotovoltaic (TPV) devices. Current MIM development has been directed toward reducing the bandgap of the device to optimize the performance for low temperature radiators (~1200 K). Low bandgap (0.55 eV) MIMs have been developed from InGaAs grown lattice mismatched to InP. A variety of buffer layer schemes have been investigated and the impact of buffer layer design on device performance has been examined
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; p-n heterojunctions; semiconductor device measurement; semiconductor device testing; thermophotovoltaic cells; 0.55 eV; 1200 K; InGaAs-InP; InGaAs-InP monolithic interconnected module; bandgap reduction; buffer layer design; device performance; lattice mismatch; n/p/n MIM TPV cell development; thermophotovoltaic devices; Buffer layers; Indium gallium arsenide; Indium phosphide; Optical buffering; Optical filters; Optical materials; Photonic band gap; Photovoltaic systems; Solar power generation; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916060
