Title :
Advances in low-bandgap InAsSbP/InAs and GaInAsSb/GaSb thermophotovoltaics
Author :
Mauk, Michael G. ; Shellenbarger, Z.A. ; Cox, Freya A. ; Tata, Anthonyn N. ; Warden, Tammie G. ; Dinetta, Louis C. ; Mueller, Robert L.
Author_Institution :
AstroPower Inc., Newark, DE, USA
Abstract :
Thermophotovoltaic devices based on InGaAsSb and InAsSbP alloys made by liquid-phase epitaxy are described. These alloys can be readily grown as thick (>50 micron) layers to form “virtual” substrates. The authors are developing cell fabrication technologies to realize series-interconnected InGaAsSb and InAsSbP TPV cell arrays for high-voltage “minimodules” by transferring epitaxial device structures to insulating surrogate substrates
Keywords :
antimony compounds; energy gap; gallium arsenide; gallium compounds; indium compounds; liquid phase epitaxial growth; semiconductor device measurement; semiconductor device testing; semiconductor growth; substrates; thermophotovoltaic cells; GaInAsSb-GaSb; GaInAsSb/GaSb low-bandgap thermophotovoltaic cells; InAsSbP-InAs; InAsSbP/InAs low-bandgap thermophotovoltaic cells; cell fabrication technologies; epitaxial device structures; high-voltage minimodules; insulating surrogate substrates; liquid-phase epitaxy; series-interconnected TPV cell arrays; virtual substrates; Current-voltage characteristics; Doping; Epitaxial growth; Fabrication; Indium gallium arsenide; Lattices; Photonic band gap; Pulse measurements; Silicon; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916061
