Advances in low-bandgap InAsSbP/InAs and GaInAsSb/GaSb thermophotovoltaics

Author

Mauk, Michael G. ; Shellenbarger, Z.A. ; Cox, Freya A. ; Tata, Anthonyn N. ; Warden, Tammie G. ; Dinetta, Louis C. ; Mueller, Robert L.

Author_Institution

AstroPower Inc., Newark, DE, USA

fYear

2000

fDate

2000

Firstpage

1028

Lastpage

1031

Abstract

Thermophotovoltaic devices based on InGaAsSb and InAsSbP alloys made by liquid-phase epitaxy are described. These alloys can be readily grown as thick (>50 micron) layers to form “virtual” substrates. The authors are developing cell fabrication technologies to realize series-interconnected InGaAsSb and InAsSbP TPV cell arrays for high-voltage “minimodules” by transferring epitaxial device structures to insulating surrogate substrates

Keywords

antimony compounds; energy gap; gallium arsenide; gallium compounds; indium compounds; liquid phase epitaxial growth; semiconductor device measurement; semiconductor device testing; semiconductor growth; substrates; thermophotovoltaic cells; GaInAsSb-GaSb; GaInAsSb/GaSb low-bandgap thermophotovoltaic cells; InAsSbP-InAs; InAsSbP/InAs low-bandgap thermophotovoltaic cells; cell fabrication technologies; epitaxial device structures; high-voltage minimodules; insulating surrogate substrates; liquid-phase epitaxy; series-interconnected TPV cell arrays; virtual substrates; Current-voltage characteristics; Doping; Epitaxial growth; Fabrication; Indium gallium arsenide; Lattices; Photonic band gap; Pulse measurements; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE

Conference_Location

Anchorage, AK

ISSN

0160-8371

Print_ISBN

0-7803-5772-8

Type

conf

DOI

10.1109/PVSC.2000.916061

Filename

916061