Title :
Proton-irradiation of Cu(In,Ga)Se2 and CuInS2 thin-film solar cells
Author :
Boden, A. ; Bräunig, D. ; Klaer, J. ; Karg, F.H. ; Hösselbarth, E. ; Roche, G. La
Author_Institution :
Hahn-Meitner-Inst., Berlin, Germany
Abstract :
Data of proton irradiated solar cells of the CIS-types (CuInS2 as well as Cu(In,Ga)Se2) are presented demonstrating the excellent radiation hardness of these thin-film devices against space radiation. Cost and weight considerations and the possible flexible structure are among the interesting points to use these cells as solar generators especially in orbits across the inner Van-Allen-belt. The degradation of the fundamental electrical parameters (ISC, VOC, FF and η) of these thin film solar cells is shown. The impact of different proton energies on the damage coefficient is correlated with the in-depth scattering processes of protons within the device. The maximum damage is produced when the rest position of the protons is within the vicinity of the absorber bulk region
Keywords :
aerospace testing; copper compounds; gallium compounds; indium compounds; proton effects; semiconductor device measurement; semiconductor device testing; semiconductor thin films; solar cells; space vehicle power plants; Cu(In,Ga)Se2 thin-film solar cells; Cu(InGa)Se2; CuInS2; CuInS2 thin-film solar cells; absorber bulk region; damage coefficient; flexible structure; in-depth scattering processes; inner Van-Allen-belt; proton energies; proton-irradiation experiments; radiation hardness; rest position; solar generators; space power; space radiation; Costs; Degradation; Flexible structures; Orbits; Photovoltaic cells; Protons; Solar power generation; Thin film devices; Time of arrival estimation; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916064
