• DocumentCode
    3031569
  • Title

    Characterization of self-formed Ti-based barrier layers in Cu(Ti)/dielectric-layer samples using X-ray Photoelectron Spectroscopy

  • Author

    Kohama, Kazuyuki ; Ito, Kazuhiro ; Sonobayashi, Yutaka ; Mori, Kenichi ; Maekawa, Kazuyoshi ; Shirai, Yasuharu ; Murakami, Masanori

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Kyoto Univ., Kyoto, Japan
  • fYear
    2010
  • fDate
    6-9 June 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, the amorphous phases in the Ti-based barrier layers are identified. More so, X-ray photoelectron spectroscopy (XPS) technique is employed to study its composition.
  • Keywords
    X-ray photoelectron spectra; amorphous state; copper alloys; diffusion barriers; low-k dielectric thin films; nanostructured materials; self-assembly; titanium alloys; CuTi-SiCN; CuTi-SiO2; X-ray photoelectron spectroscopy; XPS; amorphous phase; dielectric-layer samples; self-formed barrier layers; Amorphous materials; Annealing; Crystallization; Dielectric constant; Dielectric measurements; Electrochemical impedance spectroscopy; Electronic mail; Materials science and technology; Phase estimation; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference (IITC), 2010 International
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4244-7676-3
  • Type

    conf

  • DOI
    10.1109/IITC.2010.5510318
  • Filename
    5510318