DocumentCode
3031569
Title
Characterization of self-formed Ti-based barrier layers in Cu(Ti)/dielectric-layer samples using X-ray Photoelectron Spectroscopy
Author
Kohama, Kazuyuki ; Ito, Kazuhiro ; Sonobayashi, Yutaka ; Mori, Kenichi ; Maekawa, Kazuyoshi ; Shirai, Yasuharu ; Murakami, Masanori
Author_Institution
Dept. of Mater. Sci. & Eng., Kyoto Univ., Kyoto, Japan
fYear
2010
fDate
6-9 June 2010
Firstpage
1
Lastpage
2
Abstract
In this paper, the amorphous phases in the Ti-based barrier layers are identified. More so, X-ray photoelectron spectroscopy (XPS) technique is employed to study its composition.
Keywords
X-ray photoelectron spectra; amorphous state; copper alloys; diffusion barriers; low-k dielectric thin films; nanostructured materials; self-assembly; titanium alloys; CuTi-SiCN; CuTi-SiO2; X-ray photoelectron spectroscopy; XPS; amorphous phase; dielectric-layer samples; self-formed barrier layers; Amorphous materials; Annealing; Crystallization; Dielectric constant; Dielectric measurements; Electrochemical impedance spectroscopy; Electronic mail; Materials science and technology; Phase estimation; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference (IITC), 2010 International
Conference_Location
Burlingame, CA
Print_ISBN
978-1-4244-7676-3
Type
conf
DOI
10.1109/IITC.2010.5510318
Filename
5510318
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