Title :
PV characterization of CIGS2 thin film solar cells
Author :
Dhere, Neelkanth G. ; Kulkami, Shrikant R. ; Ghongadi, Shantinath R.
Author_Institution :
Florida Solar Energy Center, Cocoa, FL, USA
Abstract :
CuIn1-xGaxS2 (CIGS2) thin films were prepared by sulfurization of CuGa/In precursor on Mo-coated glass substrates in Ar:H2S(4%) mixture at 475°C. PV parameters of the best CIGS2 solar cells measured under AM 0 conditions at NASA GRC were as follows: Voc=739 mV, Jsc=26.01 mA/cm2 , FF=63.7%, and η=8.95%. Detailed current versus voltage and quantum efficiency analysis of ~9% (AM 0) efficient CIGS2 cells showed them to be normal, without serious limitations and some ways promising. Formation of a buried n+p homojunction probably due to Cd doping during CdS chemical bath deposition was inferred from enhancement of collection at low wavelengths under reverse bias. Such a junction is known to lead to high conversion efficiency. Values of series resistance Rs, shunt resistance Rp, diode factor A, and reverse saturation current Jo were ~0.6 Ω cm2, ~1160 Ω cm2, ~2.1 and ~2.6×168 A cm-2 respectively. Preparation of ~8% AM1.5 efficient CIGS2 thin-film solar cells on Mo-coated stainless steel foil substrates for ultra lightweight solar cells is described
Keywords :
copper compounds; gallium compounds; indium compounds; semiconductor device measurement; semiconductor device testing; semiconductor doping; semiconductor thin films; solar cells; substrates; 475 C; 739 mV; 8.95 percent; CuIn1-xGaxS2; CuInGaS2; CuInGaS2 thin-film solar cells; Mo-coated glass substrates; Mo-coated stainless steel foil substrates; PV characterization; buried n+p homojunction; chemical bath deposition; current versus voltage characteristics; diode factor; doping; quantum efficiency analysis; reverse saturation current; series resistance; shunt resistance; Chemicals; Diodes; Doping; Glass; NASA; Photovoltaic cells; Steel; Substrates; Transistors; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916066
