Title :
Modeling the effects of hydrogen on the mechanisms of dose rate sensitivity
Author :
Esqueda, Ivan S. ; Barnaby, Hugh J. ; Adell, Philippe C.
Author_Institution :
Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
The effects of hydrogen on dose-rate sensitivity are simulated using a one-dimensional (1-D) model that incorporates the physical mechanisms contributing to dose-rate effects in metal-oxide-semiconductor (MOS) structures. Calculations show that molecular hydrogen cracking at positively charged defects may be a key reaction relating hydrogen and dose rate response. Comparison to experimental data on bipolar devices results in good agreement with the dose rate calculations of interface trap buildup.
Keywords :
MIS structures; interface states; pyrolysis; 1D simulation model; MOS structure; bipolar device; dose rate calculation; dose rate response; dose rate sensitivity mechanism effect; hydrogen effect modeling; interface trap buildup; metal-oxide-semiconductor structure; molecular hydrogen cracking; one-dimensional simulation model; positively charged defect; Electron traps; Logic gates; Mathematical model; Protons; Radiation effects; Sensitivity; Dose rate; ELDRS; bipolar; hydrogen; interface traps; metal-oxide-semiconductor (MOS); silicon dioxide; total ionizing dose (TID);
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131290
