Title :
Improved smart power discrete devices fabricated using SIMOX technology
Author :
Sridhar, S. ; Baliga, B.J.
Author_Institution :
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
Abstract :
A smart power technology combining discrete high voltage devices (IGBT, BRT, SIMBRT) with SIMOX (selective implantation with oxygen) isolated NMOS, PMOS, NPN and PNP transistors is reported in this paper. A new MOS-gated thyristor (SIMBRT) structure, with enhanced RBSOA created by addition of a SIMOX layer to the BRT cell, is described for the first time. Experimental results at room and elevated temperatures are presented. The effects of lifetime control on the operation of the power device and substrate bias on the operation of low voltage control elements are also presented
Keywords :
MOS-controlled thyristors; SIMOX; carrier lifetime; insulated gate bipolar transistors; power MOSFET; semiconductor device manufacture; voltage control; BRT; IGBT; MOS-gated thyristor; NMOS; NPN transistors; PMOS; PNP transistors; SIMBRT; SIMOX technology; enhanced RBSOA; high voltage devices; lifetime control; low voltage control elements; selective implantation with oxygen; smart power discrete devices; substrate bias; Circuits; Current density; Electrons; Insulated gate bipolar transistors; Isolation technology; Logic devices; Low voltage; Substrates; Threshold voltage; Voltage control;
Conference_Titel :
Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE
Conference_Location :
Baveno
Print_ISBN :
0-7803-3500-7
DOI :
10.1109/PESC.1996.548643
