Title :
Study of Integrated Multiple-Wavelength Quantum Well Laser Structures using QWI
Author :
Choi, Kyoung Sun ; Byun, Young Tae ; Song, Jong Han ; Lee, Seok ; Woo, Deok Ha ; Kim, Sun Ho ; Jhon, Young Min ; Park, Jinwoo
Author_Institution :
Photonics Research Center, Korea Institute of Science and Technology (KIST), 39-1, Hawolgok, Seoul 136-791, Korea; Department of Electronics Engineering, Korea University, Anam-dong, Sungbuk-ku, Seoul 136-701, Korea, Tel: +82-2-958-6718, E-mail: suntime@k
Abstract :
Ion implantation-induced quantum well intermixing (QWI) of InGaAs/InGaAsP quantum well structure has shown to be an efficient way to fabricate photonic integrated circuits. We investigate the characteristics of a newly developed QWI with two-step thermal treatments.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; quantum well lasers; InGaAs; InGaAs-InGaAsP; InGaAsP; QWI; integrated multiple-wavelength quantum well laser structures; photonic integrated circuits; quantum well intermixing; Indium gallium arsenide; Indium phosphide; Monolithic integrated circuits; Photonic band gap; Photonic integrated circuits; Plasma temperature; Quantum well devices; Quantum well lasers; Sun; Waveguide lasers;
Conference_Titel :
Optical Internet and Next Generation Network, 2006. COIN-NGNCON 2006. The Joint International Conference on
Conference_Location :
Jeju
Print_ISBN :
978-89-955301-4-6
Electronic_ISBN :
978-89-955301-4-6
DOI :
10.1109/COINNGNCON.2006.4454560
