Comparison of 1200 V/50 A state-of-the-art half-bridge IGBT-modules and MCT

Author

Reimann, T. ; Krummer, R. ; Petzoldt, J.

Author_Institution

Dept. of Power Electron., Tech. Univ. Ilmenau, Germany

Volume

1

fYear

1996

fDate

23-27 Jun 1996

Firstpage

620

Abstract

The paper shows a comparison of 1200 V/50 A state-of-the-art half-bridge IGBT-modules by various manufacturers. The static, dynamic and short circuit behaviour and the power losses of the IGBTs and the free-wheel diodes which were measured in a step-down converter circuit at the same test conditions are presented. The results are discussed with reference to the active chip areas (information of the firms). Moreover, these parameters are compared to the values of a 1000 V/65 A discrete P-MCT by Harris

Keywords

MOS-controlled thyristors; bridge circuits; insulated gate bipolar transistors; losses; power convertors; semiconductor device testing; short-circuit currents; 1000 V; 1200 V; 50 A; 65 A; MCT; active chip areas; dynamic behaviour; free-wheel diodes; half-bridge IGBT-modules; power losses; short circuit behaviour; state-of-the-art; static behaviour; step-down converter circuit; test conditions; Circuit testing; Diodes; Inductance; Insulated gate bipolar transistors; Multichip modules; Power electronics; Power measurement; Switches; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE

Conference_Location

Baveno

ISSN

0275-9306

Print_ISBN

0-7803-3500-7

Type

conf

DOI

10.1109/PESC.1996.548645

Filename

548645