Title :
Comparison of 1200 V/50 A state-of-the-art half-bridge IGBT-modules and MCT
Author :
Reimann, T. ; Krummer, R. ; Petzoldt, J.
Author_Institution :
Dept. of Power Electron., Tech. Univ. Ilmenau, Germany
Abstract :
The paper shows a comparison of 1200 V/50 A state-of-the-art half-bridge IGBT-modules by various manufacturers. The static, dynamic and short circuit behaviour and the power losses of the IGBTs and the free-wheel diodes which were measured in a step-down converter circuit at the same test conditions are presented. The results are discussed with reference to the active chip areas (information of the firms). Moreover, these parameters are compared to the values of a 1000 V/65 A discrete P-MCT by Harris
Keywords :
MOS-controlled thyristors; bridge circuits; insulated gate bipolar transistors; losses; power convertors; semiconductor device testing; short-circuit currents; 1000 V; 1200 V; 50 A; 65 A; MCT; active chip areas; dynamic behaviour; free-wheel diodes; half-bridge IGBT-modules; power losses; short circuit behaviour; state-of-the-art; static behaviour; step-down converter circuit; test conditions; Circuit testing; Diodes; Inductance; Insulated gate bipolar transistors; Multichip modules; Power electronics; Power measurement; Switches; Temperature; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1996. PESC '96 Record., 27th Annual IEEE
Conference_Location :
Baveno
Print_ISBN :
0-7803-3500-7
DOI :
10.1109/PESC.1996.548645
