Title :
Effect of carrier transport in oxides surrounding active devices on SEE in 45nm SOI SRAM
Author :
Turowski, Marek ; Raman, Ashok ; Alles, Michael L. ; Ball, Dennis ; King, Michael P. ; Reed, Robert A. ; Schrimpf, Ron D.
Author_Institution :
CFD Res. Corp. (CFDRC), Huntsville, AL, USA
Abstract :
Three-dimensional NanoTCAD simulations of a 45 nm SOI SRAM cell indicate that the contributions of charge generation and transport in the surrounding oxides have a potentially meaningful effect on the SEU response in nanotechnologies.
Keywords :
SRAM chips; silicon-on-insulator; technology CAD (electronics); SEE; SEU response; SOI SRAM cell; active devices; carrier transport effect; size 45 nm; three-dimensional nanoTCAD simulations; Computational modeling; Insulators; Integrated circuit modeling; Random access memory; Single event upset; Solid modeling; Three dimensional displays; 3D; SiO2 carrier transport; Silicon-on-Insulator (SOI); TCAD; mixed-mode simulation; modeling; radiation response; single-event upset (SEU);
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131294
