DocumentCode :
3031747
Title :
Formation of pinning-free Schottky barriers on InP and related materials by novel in-situ electrochemical process and its mechanism
Author :
Sato, Taketomo ; Hasegawa, Hideki
Author_Institution :
Graduate Sch. of Electron. & Inf. Eng., Hokkaido Univ., Sapporo, Japan
fYear :
1997
fDate :
11-15 May 1997
Firstpage :
517
Lastpage :
520
Abstract :
Recently the so-called InP-based materials such as InP, In0.52Al0.48As and In0.53Ga0.47 As have become important materials for high speed electronic and optoelectronic devices. A common drawback of these materials is, however, that Schottky barrier heights (SBHs) on n-type materials are generally low. Typical SBH values are 0.45 eV, 0.60 eV and 0.20 eV for n-InP, In0.52Al0.48As and In0.53Ga0.47As, respectively. Technologically low SBH values are problematic and impose severe limitations on the realizability of MESFETs and MSM photodetectors, and performance and reliability of HEMTs. In an attempt to overcome this difficulty, we have recently found that the SBH value of the Pt/n-InP Schottky diode can be increased up to 0.86 eV by using a novel in-situ electrochemical process, and have succeeded in realization of well-behaved InP MESFETs for the first time. The purpose of the present paper is further to understand and optimize the electrochemical process in view of its possible application to formation of fine Schottky gate electrodes for InP-based HEMTs utilizing InAlAs/InGaAs/InA1As/InP heterostructures. First, electrodeposition conditions and metal selection were optimized for InP for higher SBHs. Then, applicability of the electrochemical process for formation of Schottky gate was confirmed directly on HEMT wafers. Finally, the possible mechanism for the observed SBH increase is briefly discussed
Keywords :
III-V semiconductors; Schottky barriers; electrochemistry; electrodeposition; high electron mobility transistors; indium compounds; In0.52Al0.48As; In0.53Ga0.47As; InAlAs-InGaAs-InAlAs-InP; InAlAs/InGaAs/InA1As/InP heterostructure; InP HEMT; InP-Pt; Pt/n-InP Schottky diode; Schottky barrier height; Schottky gate electrode; electrodeposition; in-situ electrochemical process; n-type material; Electrochemical processes; HEMTs; High-speed electronics; Indium phosphide; MESFETs; MODFETs; Optoelectronic devices; Photodetectors; Schottky barriers; Schottky diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
ISSN :
1092-8669
Print_ISBN :
0-7803-3898-7
Type :
conf
DOI :
10.1109/ICIPRM.1997.600216
Filename :
600216
Link To Document :
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