DocumentCode :
3031763
Title :
A single-event-hardened CMOS operational amplifier design
Author :
Blaine, Raymond W. ; Atkinson, Nicholas M. ; Kauppila, Jeffrey S. ; Armstrong, Sarah E. ; Holman, W. Timothy ; Massengill, Lloyd W.
fYear :
2011
fDate :
19-23 Sept. 2011
Firstpage :
123
Lastpage :
127
Abstract :
Novel RHBD techniques are described that utilize charge sharing to mitigate voltage transients due to single event strikes in a folded cascode operational amplifier. These techniques are verified using simulations in a 180-nm CMOS process.
Keywords :
CMOS integrated circuits; Integrated circuit modeling; Layout; Operational amplifiers; Semiconductor device modeling; Simulation; Transient analysis; Operational amplifier; charge sharing; sensitive node active charge cancellation (SNACC); single-event effects;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla, Spain
ISSN :
0379-6566
Print_ISBN :
978-1-4577-0585-4
Type :
conf
DOI :
10.1109/RADECS.2011.6131296
Filename :
6131296
Link To Document :
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