DocumentCode :
3031781
Title :
A recovery mechanism for SET protection using standard-cells
Author :
Garbayo, J.M.A. ; Valderas, M.G. ; Garcia, M.P. ; Ongil, C.L. ; Entrena, L.
Author_Institution :
Electron. Technol. Dept., Univ. Carlos III of Madrid, Leganes, Spain
fYear :
2011
fDate :
19-23 Sept. 2011
Firstpage :
128
Lastpage :
131
Abstract :
The traditional way for protecting a digital circuit against Single Event Transients (SET) implies the triplication and voting of the combinational logic in the circuit. This approach uses a high area overhead. Other approaches imply the design of specific SET hardened cells, but they are rarely available. In this paper a technique for detecting and correcting radiation-induced soft errors in combinational logic is presented. This technique offers a good protection against SET effects, with a reasonable area overhead compared to those of TMR approaches, and with little impact in the circuit performance. In addition, the proposed method uses standard cells from ASIC libraries and can be easily integrated in common ASIC design flows and tools. Results show that with this proposal, SET effects can be reduced between 90% to 100%, depending on the SET pulse width.
Keywords :
application specific integrated circuits; combinational circuits; integrated circuit design; logic design; radiation hardening (electronics); ASIC design flows; ASIC design tools; ASIC libraries; SET effects; SET protection; SET pulse width; TMR approach; area overhead; combinational logic; digital circuit protection; high-area overhead; radiation-induced soft error correction; radiation-induced soft error detection; recovery mechanism; single-event transients; specific SET-hardened cell design; standard cells; standard-cells; Circuit faults; Clocks; Detectors; Flip-flops; Image edge detection; Logic gates; Redundancy; Fault Tolerance; SET; Soft Error;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
ISSN :
0379-6566
Print_ISBN :
978-1-4577-0585-4
Type :
conf
DOI :
10.1109/RADECS.2011.6131297
Filename :
6131297
Link To Document :
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