Title :
Analysis and modeling of the radiation response of multijunction space solar cells
Author :
Walters, R.J. ; Summers, G.P. ; Messenger, S.R.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
Abstract :
The displacement damage dose methodology for analyzing and modeling performance of dual- (2J) and triple-junction (3J) InGaP2 /GaAs/Ge solar cells in a space radiation environment is presented. The foundations of the Dd methodology are described through a discussion of the basic radiation-induced damage mechanisms. The nonionizing energy loss (NIEL) is introduced, and it is shown how the effect of different radiations can be correlated on the basis of NIEL. Displacement damage dose (Dd) is defined, and electron and proton irradiation data from multijunction (MJ) solar cells are shown to correlate directly in terms of Dd. The use of the Dd method for predicting on-orbit cell performance is described, and the role played by protons with energies down to zero is quantified. A validation of the model is provided through accurate prediction of data from space flight experiments
Keywords :
III-V semiconductors; electron beam effects; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; p-n heterojunctions; proton effects; solar cells; space vehicle power plants; InGaP2-GaAs-Ge; InGaP2/GaAs/Ge solar cells; displacement damage dose methodology; dual-junction solar cells; electron irradiation data; multijunction space solar cells; nonionizing energy loss; on-orbit cell performance prediction; proton irradiation data; radiation response analysis; radiation response modeling; space radiation environment; triple-junction solar cells; Atomic measurements; Degradation; Electrons; Energy loss; Gallium arsenide; Particle scattering; Photovoltaic cells; Protons; Solar power generation; Space technology;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916077