Title :
Proton and electron radiation analysis of GaInP2/GaAs solar cells
Author :
Sharps, P.R. ; Thang, C.H. ; Martin, P.A. ; Hou, H.Q.
Author_Institution :
EMCORE Photovoltaics, Albuquerque, NM, USA
Abstract :
Electron and proton radiation damage analysis of solar cells is extremely important for predicting the response of solar cells to radiation environments in space. Two different, compatible methods of analyzing ground based radiation data have been developed. The “displacement damage dose” method is of particular interest because less experimental testing is required to make accurate performance predictions for new photovoltaic devices. In this paper we present electron and proton radiation data for the dual junction GaInP 2/GaAs cell as well as an analysis of the data using the displacement damage dose method
Keywords :
III-V semiconductors; electron beam effects; gallium arsenide; gallium compounds; indium compounds; p-n heterojunctions; proton effects; solar cells; space vehicle power plants; GaInP2-GaAs; GaInP2/GaAs solar cells; displacement damage dose; dual junction solar cell; electron radiation analysis; electron radiation damage analysis; proton radiation analysis; proton radiation damage analysis; solar cells radiation response; space radiation environments; Data analysis; Degradation; Electron emission; Gallium arsenide; Orbital calculations; Photovoltaic cells; Protons; Satellites; Space missions; Testing;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916078
