• DocumentCode
    3031883
  • Title

    Radiation response of dual-junction GayIn1-yP/Ga1-xInxAs solar cells

  • Author

    Dimroth, F. ; Bett, A.W. ; Walters, R.J. ; Summers, G.P. ; Messenger, S.R. ; Takamoto, T. ; Ikeda, E. ; Imaizumi, M. ; Anzawa, O. ; Matsuda, S.

  • Author_Institution
    Fraunhofer-Inst. fur Solare Energiesysteme, Freiburg, Germany
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    1110
  • Lastpage
    1113
  • Abstract
    The radiation response of dual-junction GayIn1-y P/Ga1-xInxAs solar cells grown with 0.35<y<0.51 and 0.01<x<0.17 is presented. These lattice-mismatched structures were grown by metal-organic-vapor-phase-epitaxy on GaAs or Ge substrates. Measurement of the photovoltaic output of the cells made under simulated one-sun, AM0 spectral conditions shows that the new dual-junction GaxIn1-xP/GayIn1-yAs cells perform as well or better than commercially available multijunction cells. Measurement of the quantum efficiency gives insight into which subcell determines the total cell degradation under proton irradiation. As has been found previously for the GayIn1-yP/GaAs tandem cell, degradation of the new GayIn1-yP/Ga1-xInxAs material combination is controlled by the bottom solar cell. Analysis of the irradiation data is used to determine the basic mechanisms governing the radiation response of these devices, including the effect of stoichiometry, lattice-mismatch and cell structure
  • Keywords
    III-V semiconductors; chemical beam epitaxial growth; gallium compounds; indium compounds; p-n heterojunctions; proton effects; semiconductor epitaxial layers; solar cells; stoichiometry; GaAs; GaAs substrates; GaInP-GaInAs; Ge; Ge substrates; bottom solar cell; cell structure; dual-junction GayIn1-yP/Ga1-xIn xAs solar cells; lattice-mismatched structures; metal-organic-vapor-phase-epitaxy; photovoltaic output measurement; proton irradiation; quantum efficiency measurement; radiation response; simulated one-sun AM0 spectral conditions; stoichiometry; subcell; total cell degradation; Degradation; Epitaxial growth; Gallium arsenide; Lattices; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Solar energy; Solar power generation; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
  • Conference_Location
    Anchorage, AK
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-5772-8
  • Type

    conf

  • DOI
    10.1109/PVSC.2000.916081
  • Filename
    916081