Title :
Proton-induced upsets in 41-nm NAND floating gate cells
Author :
Gerardin, S. ; Bagatin, M. ; Paccagnella, A. ; Schwank, J.R. ; Shaneyfelt, M.R. ; Blackmore, E.W.
Author_Institution :
Dipt. di Ing. dell´´Inf., Univ. di Padova, Padova, Italy
Abstract :
The corruption of floating gate bits due to high-energy protons is analyzed in 41-nm single level NAND Flash memories. Proton upsets are not negligible anymore, due to a combination of direct and indirect ionization effects.
Keywords :
NAND circuits; flash memories; proton effects; radiation hardening (electronics); NAND flash memory; NAND floating gate cell; indirect ionization effect; proton induced upset; size 41 nm; Electric fields; Flash memory; Ionization; Laboratories; Nonvolatile memory; Protons; Radiation effects; Flash memories; Radiation effects; Single event upset;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131302
