DocumentCode :
3031915
Title :
MBU characterization of NAND-Flash memories under heavy-ion irradiation
Author :
Grü, K. ; Walter, D. ; Herrmann, M. ; Gliem, F. ; Kettunen, H. ; Ferlet-Cavrois, V.
Author_Institution :
IDA, Tech. Univ. of Braunschweig, Braunschweig, Germany
fYear :
2011
fDate :
19-23 Sept. 2011
Firstpage :
207
Lastpage :
212
Abstract :
The angular dependence of the MBU-Cross-Section of two 8-Gbit-SLC-NAND-Flash and the orientation of the MBU-pattern has been measured.
Keywords :
NAND circuits; flash memories; MBU cross-section characterization; MBU-pattern orientation; NAND-Flash memories; angular dependence; heavy-ion irradiation; multibyte upsets; storage capacity 8 Gbit; Argon; Azimuth; Educational institutions; Europe; Measurement uncertainty; Performance evaluation; Radiation effects; Angular Dependence; MBU; NAND-Flash; SEE;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
ISSN :
0379-6566
Print_ISBN :
978-1-4577-0585-4
Type :
conf
DOI :
10.1109/RADECS.2011.6131305
Filename :
6131305
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3031915
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