DocumentCode
3031915
Title
MBU characterization of NAND-Flash memories under heavy-ion irradiation
Author
Grü, K. ; Walter, D. ; Herrmann, M. ; Gliem, F. ; Kettunen, H. ; Ferlet-Cavrois, V.
Author_Institution
IDA, Tech. Univ. of Braunschweig, Braunschweig, Germany
fYear
2011
fDate
19-23 Sept. 2011
Firstpage
207
Lastpage
212
Abstract
The angular dependence of the MBU-Cross-Section of two 8-Gbit-SLC-NAND-Flash and the orientation of the MBU-pattern has been measured.
Keywords
NAND circuits; flash memories; MBU cross-section characterization; MBU-pattern orientation; NAND-Flash memories; angular dependence; heavy-ion irradiation; multibyte upsets; storage capacity 8 Gbit; Argon; Azimuth; Educational institutions; Europe; Measurement uncertainty; Performance evaluation; Radiation effects; Angular Dependence; MBU; NAND-Flash; SEE;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location
Sevilla
ISSN
0379-6566
Print_ISBN
978-1-4577-0585-4
Type
conf
DOI
10.1109/RADECS.2011.6131305
Filename
6131305
Link To Document