Title :
Impact of total ionizing dose on the electromagnetic susceptibility of a single bipolar transistor
Author :
Doridant, A. ; Jarrix, S. ; Raoult, J. ; Blain, A. ; Chatry, N. ; Calvel, P. ; Hoffmann, P. ; Dusseau, L.
Author_Institution :
Inst. d´´Electron. du Sud (IES), UM2, Montpellier, France
Abstract :
Space or military electronic components are subject to both electromagnetic fields and total ionizing dose. This paper deals with the modification in the susceptibility to 100 MHz - 1.5 GHz signals of a discrete low frequency transistor subsequently to total ionizing dose deposition. The electromagnetic susceptibility is investigated on both non-irradiated and irradiated transistors mounted in common emitter configuration. A synergy effect between near field electromagnetic interferences and total ionizing dose is observed.
Keywords :
electromagnetic fields; electromagnetic interference; magnetic susceptibility; microwave bipolar transistors; space vehicle electronics; common emitter configuration; discrete low frequency transistor; electromagnetic fields; electromagnetic susceptibility; frequency 100 MHz to 1.5 GHz; military electronic components; near field electromagnetic interferences; no-irradiated transistors; single bipolar transistor; space electronic components; synergy effect; Bipolar transistors; Electromagnetic interference; Electromagnetics; Integrated circuits; Probes; Radiation effects; Transistors; Bipolar Transistor; Near-field interference; Total ionizing dose;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131307
