DocumentCode :
3032112
Title :
Increase on Siemens Reactor Throughput by Tailoring Temperature Profile of Polysilicon Rods
Author :
Coso, G. Del ; del Canizo, C. ; Tobias, I. ; Luque, A.
Author_Institution :
Univ. Politecnica de Madrid, Madrid
fYear :
2007
fDate :
Jan. 31 2007-Feb. 2 2007
Firstpage :
25
Lastpage :
28
Abstract :
Siemens process productivity can be limited by non homogeneous temperature profile in polysilicon rods. To overcome this limitation high frequency current sources have been proposed. An analysis is presented which, based on electromagnetic and heat transfer theory, studies temperature and current density profiles within the rods. Two linked differential equations have been numerically solved by use of non-linear methods. The solution of these equations shows that by means of an increase in current frequency, skin effect takes place, heat generation in the inner part of the rod is decreased and therefore temperature homogeneity increases. The effect of high frequency current sources in the rod stability is also analyzed, and it can be derived that resonance problems could appear.
Keywords :
chemical vapour deposition; current density; differential equations; electromagnetic field theory; elemental semiconductors; heat transfer; mechanical stability; productivity; reactors (electric); silicon; skin effect; thermal analysis; vibrations; Siemens process productivity; Siemens reactor; current density profile; current frequency; differential equations; electromagnetic theory; heat generation; heat transfer theory; high frequency current sources limitation; nonhomogeneous temperature profile; nonlinear methods; polysilicon rods; resonance problems; rod stability; skin effect; temperature density profile; temperature homogeneity; Current density; Differential equations; Electromagnetic analysis; Electromagnetic heating; Frequency; Heat transfer; Inductors; Productivity; Temperature; Throughput; Siemens process; beam vibration; heat transfer; magnetic fields;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices, 2007 Spanish Conference on
Conference_Location :
Madrid
Print_ISBN :
1-4244-0868-7
Type :
conf
DOI :
10.1109/SCED.2007.383955
Filename :
4271159
Link To Document :
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