DocumentCode
3032114
Title
Analysis of p+-AlGaAs/n+-InGaP tunnel junction for high solar concentration cascade solar cells
Author
Bedair, S.M. ; Roberts, J.C. ; Jung, D. ; Moody, B.F. ; El-Masry, N.A. ; Katsuyama, T.
Author_Institution
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fYear
2000
fDate
2000
Firstpage
1154
Lastpage
1156
Abstract
A p+-Al0.36Ga0.64As/n+-In 0.5Ga0.5P heterojunction tunnel diode with band gap Eg=1.9 eV was fabricated. Doping levels of 1×1020 cm-3 and 5×1019 cm -3 were achieved in the p and n side of the diode using carbon and selenium respectively, resulting in a peak current, Jp =80 A/cm2. This diode is used to interconnect the high and low band gap cells in a cascade solar cell structure. For a forward current of 20 A/cm2, the expected current density at 1000 Suns operation, there is only a 20 mV drop across this tunnel junction
Keywords
aluminium compounds; energy gap; gallium arsenide; gallium compounds; indium compounds; p-n heterojunctions; solar cells; solar energy concentrators; tunnel diodes; 1.9 eV; 20 mV; Al0.36Ga0.64As-In0.5Ga0.5P; Al0.36Ga0.64As-In0.5Ga0.5P heterojunction tunnel diode; band gap; band gap cells interconnection; current density; high solar concentration cascade solar cells; peak current; Current density; Diodes; Doping; Electrons; Heterojunctions; Photonic band gap; Photovoltaic cells; Sun; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location
Anchorage, AK
ISSN
0160-8371
Print_ISBN
0-7803-5772-8
Type
conf
DOI
10.1109/PVSC.2000.916092
Filename
916092
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