Title :
Second generation (200MHz) RAD750 microprocessor radiation evaluation
Author :
Haddad, Nadim F. ; Brown, Ronald D. ; Ferguson, Richard ; Kelly, Andrew T. ; Lawrence, Reed K. ; Pirkl, Daniel M. ; Rodgers, John C.
Author_Institution :
BAE Syst., Inc., Manassas, VA, USA
Abstract :
The 200MHz RAD750™ PowerPC™ Microprocessor is a second generation RAD750 fabricated in the BAE Systems´ RH18, 180nm radiation hardened process technology. The processor was evaluated in the various radiation environments and demonstrated significant improvements in performance, power and radiation tolerance over the first generation 133MHz RAD750.
Keywords :
CMOS digital integrated circuits; integrated circuit design; microfabrication; microprocessor chips; radiation hardening (electronics); BAE systems RH18; CMOS processing; first generation RAD750; frequency 133 MHz; frequency 200 MHz; power tolerance; radiation hardened process technology; radiation tolerance; second generation RAD750 PowerPC microprocessor radiation evaluation; size 180 nm; Current measurement; Error analysis; Microprocessors; Radiation effects; Radiation hardening; Sensitivity; Ion Radiation Effects; Microprocessor; Radiation Effects; Radiation Hardening; Space Technology;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on
Conference_Location :
Sevilla
Print_ISBN :
978-1-4577-0585-4
DOI :
10.1109/RADECS.2011.6131320
