DocumentCode :
3032237
Title :
Electric-field drive optical modulator using Si ring resonator
Author :
Amemiya, Y. ; Tanushi, Y. ; Tokunaga, T. ; Yokoyama, S.
Author_Institution :
Res. Center for Nanodevices & Syst., Hiroshima Univ., Higashi-Hiroshima
fYear :
2008
fDate :
4-7 Aug. 2008
Firstpage :
1
Lastpage :
2
Abstract :
The optical modulation of Si ring resonator by applying electric-field was, for the first time, achieved although carrier injection type modulations were reported. The 33% optical modulation was realized at applied voltage of 200 V.
Keywords :
ULSI; electro-optical modulation; elemental semiconductors; integrated optics; optical interconnections; optical resonators; silicon; Si; carrier injection type modulations; electric-field drive optical modulator; optical modulation; ring resonator; voltage 200 V; Optical films; Optical interconnections; Optical interferometry; Optical modulation; Optical refraction; Optical ring resonators; Optical variables control; Resonance; Scanning electron microscopy; Voltage; Si Ring resonator; carrier concentration modulation; electric-field drive; optical modulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics in Switching, 2008. PS 2008. International Conference on
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-4326-0
Electronic_ISBN :
978-4-8855-2228-4
Type :
conf
DOI :
10.1109/PS.2008.4804175
Filename :
4804175
Link To Document :
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