Title :
Triple-junction GaInP/GaAs/Ge solar cells-production status, qualification results and operational benefits
Author :
Granata, Jennifer E. ; Ermer, James H. ; Hebert, Peter ; Haddad, Moran ; King, Richard R. ; Krut, Dmitri D. ; Lovelady, James ; Gillanders, Mark S. ; Karam, Nasser H. ; Cavicchi, B. Terence
Author_Institution :
Spectrolab Inc., Sylmar, CA, USA
Abstract :
In 1999 Spectrolab completed design and qualification, and began production on the next generation of multijunction solar cells-a triple-junction GaInP/GaAs/Ge. With over 20% AM0 conversion efficiency at an operating temperature of 60°C, this cell provides 8-11% more power than competing dual-junction designs in GEO orbit after 15 years (6×1014 1-MeV electron equivalence). Spectrolab is currently qualifying an improved triple-junction cell capable of delivering over 22% AM0 conversion efficiency under these same conditions, with a beginning-of-life operating efficiency of 27%
Keywords :
III-V semiconductors; aerospace testing; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; p-n heterojunctions; semiconductor device measurement; semiconductor device testing; solar cells; space vehicle power plants; 1 MeV; 15 y; 27 percent; 60 C; AM0 conversion efficiency; GEO orbit; GaInP-GaAs-Ge; GaInP/GaAs/Ge triple junction solar cells; Spectrolab; beginning-of-life operating efficiency; space power; Epitaxial growth; Epitaxial layers; Gallium arsenide; Knee; Photovoltaic cells; Power system modeling; Production systems; Qualifications; System testing; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.916099
