DocumentCode :
3032250
Title :
The Radiation Tolerance Problem: Analytical Modelling of Inter-Dependency of Parameters
Author :
Kadim, H.J.
Author_Institution :
Sch. of Eng., LJMU, Liverpool, UK
fYear :
2009
fDate :
20-21 Aug. 2009
Firstpage :
127
Lastpage :
131
Abstract :
Radiation-induced damage presents a serious threat facing space applications. This threat has lead to an increasingly growing demand for radiation tolerant electronic devices. The radiation tolerance is likely to present an intractable problem to satisfy. One way of dealing with the radiation tolerance problem could be through analytical modelling of the many radiation-effects parameters, some of which are design dependent and others are process dependent. The paper presents analytical modelling expressions that allow for investigation of the coupling effect between a range of design and process related parameters. Examinations of the inter-dependency of these parameters would aid identifying possible solutions to the radiation tolerance problem.
Keywords :
MOSFET; radiation hardening (electronics); semiconductor device models; tolerance analysis; MOS transistors; radiation tolerance problem; radiation tolerant electronic devices; radiation-effect parameter modelling; radiation-induced damage; space radiation; Absorption; Analytical models; Hazards; Intelligent systems; Ionization; MOSFET circuits; Military satellites; Radiative recombination; Semiconductor materials; Spontaneous emission; DSM; Space; military; radiation; satellite; security; traps;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bio-inspired Learning and Intelligent Systems for Security, 2009. BLISS '09. Symposium on
Conference_Location :
Edinburgh
Print_ISBN :
978-0-7695-3754-2
Type :
conf
DOI :
10.1109/BLISS.2009.33
Filename :
5376810
Link To Document :
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