Parameter Extraction Method using Genetic Algorithms for an Improved OTFT Compact Model

Author

Moreno, P. ; Picos, R. ; Roca, M. ; García-Moreno, E. ; Iiguez, Benjamin ; Estrada, M.

Author_Institution

Univ. of Balearic Islands, Palma

fYear

2007

fDate

Jan. 31 2007-Feb. 2 2007

Firstpage

64

Lastpage

67

Abstract

In this paper, an improved compact OTFT model extending previous models into the subthreshold regime is presented. Two parameter extraction techniques using genetic algorithms (queen-bee and crossing-mates) are considered in order to determine the values of the main model parameters. The model and parameter extraction procedures are applied to a set of experimental measures in OTFTs from Infineon. Agreement between experimental and modelled DC I-V characteristics is excellent with both extraction methods but crossing-mates algorithm is faster and its results are more independent of the initial conditions.

Keywords

genetic algorithms; organic semiconductors; parameter estimation; semiconductor device models; thin film transistors; Infineon; OTFT compact model; crossing-mates algorithm; genetic algorithm; organic thin-film transistor; parameter extraction method; subthreshold regime; Circuit simulation; Crystallization; Displays; Genetic algorithms; Leakage current; Optimization methods; Organic thin film transistors; Parameter extraction; Thin film transistors; Threshold voltage; Compact models; OTFTs; genetic algorithm; parameter extraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices, 2007 Spanish Conference on

Conference_Location

Madrid

Print_ISBN

1-4244-0868-7

Type

conf

DOI

10.1109/SCED.2007.383996

Filename

4271169