Title :
Parameter Extraction Method using Genetic Algorithms for an Improved OTFT Compact Model
Author :
Moreno, P. ; Picos, R. ; Roca, M. ; García-Moreno, E. ; Iiguez, Benjamin ; Estrada, M.
Author_Institution :
Univ. of Balearic Islands, Palma
fDate :
Jan. 31 2007-Feb. 2 2007
Abstract :
In this paper, an improved compact OTFT model extending previous models into the subthreshold regime is presented. Two parameter extraction techniques using genetic algorithms (queen-bee and crossing-mates) are considered in order to determine the values of the main model parameters. The model and parameter extraction procedures are applied to a set of experimental measures in OTFTs from Infineon. Agreement between experimental and modelled DC I-V characteristics is excellent with both extraction methods but crossing-mates algorithm is faster and its results are more independent of the initial conditions.
Keywords :
genetic algorithms; organic semiconductors; parameter estimation; semiconductor device models; thin film transistors; Infineon; OTFT compact model; crossing-mates algorithm; genetic algorithm; organic thin-film transistor; parameter extraction method; subthreshold regime; Circuit simulation; Crystallization; Displays; Genetic algorithms; Leakage current; Optimization methods; Organic thin film transistors; Parameter extraction; Thin film transistors; Threshold voltage; Compact models; OTFTs; genetic algorithm; parameter extraction;
Conference_Titel :
Electron Devices, 2007 Spanish Conference on
Conference_Location :
Madrid
Print_ISBN :
1-4244-0868-7
DOI :
10.1109/SCED.2007.383996