Title :
Influence of gate geometry in integrated MOS varactors on accumulation mode for RF
Author :
Amselem, E. ; González, B. ; García, J. ; Aldea, I. ; Marrero, M. ; Iturri, A.G. ; Pino, J. Del ; Khemchandani, S.L. ; Hernández, A.
Author_Institution :
Univ. de Las Palmas de Gran Canaria, Las Palmas
fDate :
Jan. 31 2007-Feb. 2 2007
Abstract :
Driven by the many applications that varactors have in RF integrated blocks, this work analyzes the influence of gate geometry (width and length) on integrated accumulation MOS varactors. For this purpose, a number of varactors have been designed and fabricated on a 0.8 mum CMOS standard technology. The most relevant parameters: quality factor, tuning range, and capacitance, are simulated and compared against measurements. Some design considerations are reported.
Keywords :
CMOS integrated circuits; MOS integrated circuits; radiofrequency integrated circuits; varactors; CMOS; RF integrated blocks; gate geometry; integrated accumulation MOS varactors; quality factor; size 0.8 mum; tuning range; CMOS technology; Capacitance measurement; Circuit simulation; Fabrication; Geometry; Integrated circuit measurements; Q factor; Radio frequency; Varactors; Voltage; MOS; RF; integrated circuit; varactor;
Conference_Titel :
Electron Devices, 2007 Spanish Conference on
Conference_Location :
Madrid
Print_ISBN :
1-4244-0868-7
DOI :
10.1109/SCED.2007.383997
